DS1626/DS1726
4 of 12
EEPROM AC ELECTRICAL CHARACTERISTICS
(V
DD
= 2.7V to 5.5V, T
A
= -55癈 to +125癈.)
PARAMETER
SYMBOL CONDITIONS
MIN TYP MAX UNITS
EEPROM Write Cycle Time
t
wr
4
10
ms
EEPROM Writes
N
EEWR
-55癈 to +55癈
50k
Writes
EEPROM Data Retention
t
EEDR
-55癈 to +55癈
10
Years
AC ELECTRICAL CHARACTERISTICS
(V
DD
= 2.7V to 5.5V, T
A
= -55癈 to +125癈.)
PARAMETER
SYMBOL CONDITIONS
MIN TYP MAX UNITS
9 bits
93.75
10 bits
187.5
11 bits
375
Temperature Conversion Time
t
TC
12 bits
750
ms
Data In to Clock Setup
t
DC
(Note 5)
35
ns
Clock to Data In Hold
t
CDH
(Note 5)
40
ns
Clock to Data Out Delay
t
CDD
(Notes 5, 6)
150
ns
Clock Low/High Time
t
CL
, t
CH
(Note 5)
285
ns
Clock Frequency
f
CLK
(Note 5)
0
1.75
MHz
Clock Rise/Fall Time
t
R
, t
F
(Note 5)
500
ns
RST to Clock Setup
t
RC
(Note 5)
100
ns
Clock to RST Hold
t
CRH
(Note 5)
40
ns
RST Inactive Time
t
RI
(Note 7)
125
ns
Clock High to I/O Hi-Z
t
CDZ
(Note 5)
50
ns
RST Low to I/O Hi-Z
t
RDZ
(Note 5)
50
ns
CNV Pulse Width
t
CNV
(Note 8)
250ns
500ms
I/O Capacitance
C
I/O
10
pF
Input Capacitance
C
I
5
pF
NOTES:
1) All voltages are referenced to ground.
2) See Figure 2 for TYPICAL OPERATING CURVES.
3) I
STBY
, I
DD
specified with DQ, CLK/CNV = V
DD
and RST = GND.
4) Drift data is based on a 1000hr stress test at +125癈 with V
DD
= 5.5V.
5) See Timing Diagrams in Figure 3. All timing is referenced to 0.7 x V
DD
and 0.3 x V
DD
.
6) Load capacitance = 50pF.
7) t
RI
must be 10ms minimum following any write command that involves the E
2
memory.
8) 250ns is the guaranteed minimum pulse width for a conversion to start, however, a smaller pulse
width may start a conversion.
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